AP68N04DF datasheet(1/7 Pages) APME

номер детали	AP68N04DF

подробное описание детали	40V N-Channel Enhancement Mode MOSFET

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AP68N04DF

40V N-Channel Enhancement Mode MOSFET

AP68N04DF RVE1.0

永源微電子科技有限公司

Description

The AP68N04DF uses advanced APM-SGT V technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 40V ID =68A

RDS(ON) < 8.5mΩ @ VGS=10V （Type：6.9mΩ）

Ciss≈690 PF

Application

Wireless charging

Boost driver

Brushless motor

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP68N04DF

PDFN3*3-8L

AP68N04DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±

20

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

68

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

33

A

IDM

Pulsed Drain Current2

125

A

EAS

Single Pulse Avalanche Energy3

31

mJ

IAS

Avalanche Current

31

A

PD@TA=25℃

Total Power Dissipation4

1.67

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

30

℃

/W

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Аналогичный номер детали - AP68N04DF

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