APM32E103CCU6-R datasheet(38/79 Pages) GEEHY

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（3） Positive injection is not possible on these I/Os. a negative injection is induced by VIN<VSS.

IINJ(PIN) must never be exceeded.

（4） A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS.

IINJ(PIN) must never be exceeded.

（5） When several inputs are submitted to a current injection, the maximum

ΣIINJ(PIN) is the

absolute sum of the positive and negative injected currents (instantaneous values).

5.3.4.

Electrostatic discharge (ESD)

Table 16 ESD Absolute Maximum Ratings

Symbol

Parameter

Conditions

Value

Unit

VESD(HBM)

Electrostatic discharge voltage (human body model)

TA = +25

℃

5000

Note: The samples are measured by a third-party testing organization and are not tested in production.

5.3.5.

Static latch-up (LU)

Table 17 Static Latch-up

Symbol

Parameter

Conditions

Type

Class of static latch-up

TA = +25

℃/105℃, conforming to EIA/JESD78E

CLASS

Ⅱ A

Note: The samples are measured by a third-party testing organization and are not tested in production.

5.4.

On-chip memory

5.4.1.

Flash characteristics

Table 18 Flash Memory Characteristics

Symbol

Parameter

Conditions

Minimum

value

Typical

value

Maximum

value

Unit

tprog

16-bit programming time

TA = -40~105

℃

VDD=2.4~3.6V

46.08

μs

tERASE

Page (2KBytes) erase time

TA = -40~105

℃

VDD=2.4~3.6V

tME

Whole erase time

TA = 40~105

℃

VDD=3.3V

Vprog

Programming voltage

TA = -40~105

℃

3.6

tRET

Data saving time

TA=125℃

10.77

years

NRW

Erase cycle

TA=85°C

100K

cycles

Note: It is obtained from a comprehensive evaluation and is not tested in production.

5.5.

Clock

5.5.1.

Characteristics of external clock source

5.5.1.1.

High-speed external clock generated by crystal resonator

For detailed parameters (frequency, package, precision, etc.) of crystal resonator, please

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