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FS8205A датащи(PDF) 2 Page - FuxinSemi All Rights Reserved.

номер детали FS8205A
подробное описание детали  N-Channel Enhancement Mode MOSFET
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Page 2
Ver2.1
Absolute maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
6
A
Pulsed Drain Current
IDM
25
A
Power Dissipation
PD
1.5
W
Junction Temperature
TJ
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Electrical characteristics (TA=25
oC, unless otherwise noted)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
20
V
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±12V, VDS = 0V
±100
nA
Gate threshold voltage
VGS(th)
VDS =VGS, ID =250µA
0.5
1.2
V
Drain-source on-resistance
1)
RDS(on)
VGS =4.5V, ID =6.0A
18
25
mΩ
VGS =2.5V, ID =5.0A
23
32
Forward transconductance
1)
gFS
VDS =5V, ID =7A
9
S
Dynamic characteristics
2)
Input Capacitance
Ciss
VDS =8V,VGS =0V,f =1MHz
800
pF
Output Capacitance
Coss
155
Reverse Transfer Capacitance
Crss
125
Total Gate Charge
Qg
VDS =10V,VGS =4.5V,ID =4A
11
nC
Gate-Source Charge
Qgs
2.3
Gate-Drain Charge
Qgd
2.5
Turn-on delay time
td(on)
VDD=10V,VGS=4V,
ID =1A,,RGEN=10Ω
13
nS
Turn-on rise time
tr
54
Turn-off delay time
td(off)
18
Turn-off fall time
tf
11
Source-Drain Diode characteristics
Diode Forward voltage
VDS
VGS =0V, IS=4.0A
1.2
V
Notes:
1)
Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%.
2)
Guaranteed by design, not subject to production testing.
N-Channel Enhancement Mode MOSFET
-55 ~ +150



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