ISL8485, ISL8490, ISL8491

FN6046 Rev 10.02

Page 11 of 15

Oct 2, 2023

Die Characteristics

SUBSTRATE POTENTIAL (POWERED UP):

GND

TRANSISTOR COUNT:

518

PROCESS:

Si Gate CMOS

FIGURE 12. DRIVER AND RECEIVER WAVEFORMS,

LOW TO HIGH

FIGURE 13. DRIVER AND RECEIVER WAVEFORMS,

HIGH TO LOW

Typical Performance Curves VCC = 5V, TA = 25°C, ISL8485, ISL8490, ISL8491; unless otherwise specified (Continued)

TIME (10ns/DIV)

0

3

4

1

2

RDIFF = 54Ω, CL = 100pF

DI

A/Y

RO

0

5

0

5

B/Z

TIME (10ns/DIV)

0

DI

RO

3

4

1

2

0

5

0

5

RDIFF = 54Ω, CL = 100pF

B/Z

A/Y