AP40N06DF datasheet(1/7 Pages) APME

номер детали	AP40N06DF

подробное описание детали	60V N-Channel Enhancement Mode MOSFET

PDF	7 Pages

Scroll/Zoom	100%

производитель	APME [A POWER MICROELECTRONICS]

домашняя страница

Logo

1 / 7 page

AP40N06DF

60V N-Channel Enhancement Mode MOSFET

AP40N06DF RVE1.0

永源微電子科技有限公司

Description

The AP40N06DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =40A

RDS(ON) < 32mΩ @ VGS=10V （Type：20mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40N06DF

PDFN3*3-8L

AP40N06DF XXXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

40

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

18

A

IDM

Pulsed Drain Current2

114

A

EAS

Single Pulse Avalanche Energy3

25.5

mJ

IAS

Avalanche Current

22

A

PD@TC=25℃

Total Power Dissipation4

34.7

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

3.6

℃

/W

Аналогичный номер детали - AP40N06DF

производитель	номер детали	датащи	подробное описание детали
A POWER MICROELECTRONIC...	AP40N02DF	950Kb / 7P	20V N-Channel Enhancement Mode MOSFET REV1.0
	AP40N02NF	1Mb / 7P	20V N-Channel Enhancement Mode MOSFET REV1.0
	AP40N03DF	842Kb / 7P	30V N-Channel Enhancement Mode MOSFET REV1.1
Advanced Power Electron...	AP40N03GJ-HF	102Kb / 4P	Fast Switching Characteristic RoHS Compliant & Halogen-Free
Advanced Power Electron...	AP40N03GP	106Kb / 4P	Low Gate Charge Simple Drive Requirement

More results

Аналогичное описание - AP40N06DF

производитель	номер детали	датащи	подробное описание детали
Zetex Semiconductors	ZXMN6A07F	1Mb / 7P	60V N-CHANNEL ENHANCEMENT MODE MOSFET
Zetex Semiconductors	ZXMN6A08E6	850Kb / 7P	60V N-CHANNEL ENHANCEMENT MODE MOSFET
Taiwan Semiconductor Co...	TSM2N7002	129Kb / 3P	60V N-Channel Enhancement Mode MOSFET
Pan Jit International I...	PJP6000	127Kb / 4P	60V N-Channel Enhancement Mode MOSFET
	2N7002DW	164Kb / 5P	60V N-Channel Enhancement Mode MOSFET
	2N7002FN3	96Kb / 3P	60V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated	ZXMN6A08E6	657Kb / 8P	60V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 5
Diodes Incorporated	DMN6040SVT-7	205Kb / 7P	60V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 10
Pan Jit International I...	2N7002DW	155Kb / 5P	60V N-Channel Enhancement Mode MOSFET
Pan Jit International I...	2N7002W	159Kb / 6P	60V N-Channel Enhancement Mode MOSFET

More results

AP40N06DF датащи(PDF) 1 Page - A POWER MICROELECTRONICS

AP40N06DF датащи(HTML) 1 Page - A POWER MICROELECTRONICS

Аналогичный номер детали - AP40N06DF

Аналогичное описание - AP40N06DF

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL