Electrical Characteristics (Ta= 25°C unless otherwise specified)

Comchip Technology CO., LTD.

Page 2

REV:A

General Purpose Transistor

Company reserves the right to improve product design , functions and reliability without notice.

QW-JTR59

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Unit

Symbol

Parameter

Min.

VCBO

VCEO

VEBO

ICBO

VCE(sat)

-80

-50

-30

-65

-45

-30

-5

-15

V

V

V

nA

Test Conditions

IC=-10μA, IE=0

IC=-10mA, IB=0

IE=-1μA, IC=0

VCB=-30V, IE=0

Max.

DC current gain

hFE

BC856AW, BC857AW, BC858AW

BC856BW, BC857BW, BC858BW

BC857CW, BC858CW

VCE=-5V, IC=-2mA

250

475

800

-0.65

Base-Emitter saturation voltage

VBE(sat)

V

Transition frequency

fT

MHZ

100

VCE=-5V, IC=-10mA, f=100MHZ

125

220

420

V

IC=-100mA , IB=-5mA

IC=-100mA, IB=-5mA

Cob

Collector capacitance

pF

VCB=-10V, f=1MHZ

BC856W-HF

BC858W-HF

BC857W-HF

BC856W-HF

BC858W-HF

BC857W-HF

Collector-Emitter saturation voltage

-1.1

4.5