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2N60L-B-TN3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали 2N60L-B-TN3-R
подробное описание детали  2 Amps,􀀁600/650 Volts N-CHANNEL MOSFET
PDF  8 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N60L-B-TN3-R датащи(HTML) 2 Page - Unisonic Technologies

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2N60L
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-182,A
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
2N60L-A
600
V
Drain-Source Voltage
2N60L-B
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
2.0
A
TC = 25°C
2.0
A
Drain Current Continuous
TC = 100°C
ID
1.26
A
Drain Current Pulsed (Note 1)
IDP
8.0
A
Single Pulsed (Note 2)
EAS
140
mJ
Avalanche Energy
Repetitive (Note 1)
EAR
4.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
32
W
TO-220F
9
W
TO-251
25
W
Total Power Dissipation
TO-252
PD
20
W
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
UNIT
TO-251
65
TO-252
58
TO-220
43
Thermal Resistance Junction-Ambient
TO-220F
θJA
38
TO-251
5
TO-252
6
TO-220
4
Thermal Resistance Junction-Case
TO-220F
θJc
12
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
2N60L-A
600
V
Drain-Source Breakdown Voltage
2N60L-B
BVDSS
VGS = 0V, ID = 250µA
650
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
10
µA
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature
Coefficient
△
BVDSS/T
△ J
ID = 250 µA, Referenced to
25°C
0.4
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
3.8
5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
270
350
pF
Output Capacitance
COSS
40
50
pF
Reverse Transfer Capacitance
CRSS
VDS =25V, VGS =0V, f =1MHz
5
7
pF



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