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ZXT12P40DXTC датащи(PDF) 2 Page - Zetex Semiconductors |
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ZXT12P40DXTC датащи(HTML) 2 Page - Zetex Semiconductors |
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2 / 7 page ![]() ISSUE 2 - DECEMBER 2006 ZXT12P40DX THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) RθJA 143 °C/W Junction to Ambient (b)(d) RθJA 100 °C/W Junction to Ambient (a)(e) RθJA 120 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. 2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -7.5 V Peak Pulse Current ICM -5 A Continuous Collector Current IC -2 A Base Current IB -500 mA Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 0.87 6.9 W mW/°C Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD 1.04 8.3 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 1.25 10 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C |
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