IRGP20B60PDPBF datasheet(2/11 Pages) IRF

2 / 11 page

IRGP20B60PDPbF

www.irf.com

Notes:

RCE(on) typ. = equivalent on-resistance = VCE(on) typ. / IC, where VCE(on) typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for

applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.

VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.

Pulse width limited by max. junction temperature.

Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.

Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.

Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Conditions

Ref.Fig

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

——V

VGE = 0V, IC = 500µA

∆V(BR)CES/∆TJ

Temperature Coeff. of Breakdown Voltage

—0.32—

V/°C VGE = 0V, IC = 1mA (25°C-125°C)

Internal Gate Resistance

—

4.3

—

Ω

1MHz, Open Collector

—2.05

2.35

IC = 13A, VGE = 15V

4, 5,6,8,9

VCE(on)

Collector-to-Emitter Saturation Voltage

—

2.50

2.80

IC = 20A, VGE = 15V

—2.65

3.00

IC = 13A, VGE = 15V, TJ = 125°C

—3.30

3.70

IC = 20A, VGE = 15V, TJ = 125°C

VGE(th)

Gate Threshold Voltage

3.0

4.0

5.0

IC = 250µA

7,8,9

∆VGE(th)/∆TJ

Threshold Voltage temp. coefficient

—

-11

—

mV/°C VCE = VGE, IC = 1.0mA

gfe

Forward Transconductance

—

VCE = 50V, IC = 40A, PW = 80µs

ICES

Collector-to-Emitter Leakage Current

—

1.0

250

µA

VGE = 0V, VCE = 600V

—0.1

—

mA VGE = 0V, VCE = 600V, TJ = 125°C

VFM

Diode Forward Voltage Drop

—

1.4

1.7

IF = 12A, VGE = 0V

—1.3

1.6

IF = 12A, VGE = 0V, TJ = 125°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V, VCE = 0V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Ref.Fig

Total Gate Charge (turn-on)

—

102

IC = 13A

Qgc

Gate-to-Collector Charge (turn-on)

—

nC VCC = 400V

CT1

Qge

Gate-to-Emitter Charge (turn-on)

—

VGE = 15V

Eon

Turn-On Switching Loss

—

140

IC = 13A, VCC = 390V

CT3

Eoff

Turn-Off Switching Loss

—

100

145

µJ

VGE = +15V, RG = 10Ω, L = 200µH

Etotal

Total Switching Loss

—

195

285

TJ = 25°C

td(on)

Turn-On delay time

—

IC = 13A, VCC = 390V

CT3

Rise time

—

5.0

7.0

VGE = +15V, RG = 10Ω, L = 200µH

td(off)

Turn-Off delay time

—

115

135

TJ = 25°C

fÃ

Fall time

—

6.0

8.0

Eon

Turn-On Switching Loss

—

165

215

IC = 13A, VCC = 390V

CT3

Eoff

Turn-Off Switching Loss

—

150

195

µJ

VGE = +15V, RG = 10Ω, L = 200µH

11,13

Etotal

Total Switching Loss

—

315

410

TJ = 125°C

WF1,WF2

td(on)

Turn-On delay time

—

IC = 13A, VCC = 390V

CT3

Rise time

—

6.0

8.0

VGE = +15V, RG = 10Ω, L = 200µH

12,14

td(off)

Turn-Off delay time

—

125

140

TJ = 125°C

fÃ

WF1,WF2

Fall time

—

Cies

Input Capacitance

—

1570

—

VGE = 0V

Coes

Output Capacitance

—

130

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1Mhz

Coes eff.

Effective Output Capacitance (Time Related)

—94—

VGE = 0V, VCE = 0V to 480V

Coes eff. (ER) Effective Output Capacitance (Energy Related) g

—76—

TJ = 150°C, IC = 80A

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

VCC = 480V, Vp =600V

CT2

Rg = 22

Ω, VGE = +15V to 0V

trr

Diode Reverse Recovery Time

—

TJ = 25°C

IF = 12A, VR = 200V,

—80

120

TJ = 125°C

di/dt = 200A/µs

Qrr

Diode Reverse Recovery Charge

—

180

nC TJ = 25°C

IF = 12A, VR = 200V,

—

220

600

TJ = 125°C

di/dt = 200A/µs

Irr

Peak Reverse Recovery Current

—

3.5

6.0

TJ = 25°C

IF = 12A, VR = 200V,

19,20,21,22

—5.6

TJ = 125°C

di/dt = 200A/µs

CT5

Conditions

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