AP13P20PIT

-200V P-Channel Enhancement Mode MOSFET

AP13P20P/T RVE1.0

永源微電子科技有限公司

V

Description

The AP13P20P/T is silicon P-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

DS

=-200V ID =13A

RDS(ON) < 420mΩ @ VGS=10V （Type：340mΩ）

Application

Uninterruptible Power Supply(UPS)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP13P20P

TO-220-3L

AP13P20P XXX YYYY

1000

AP13P20T

AP13P20T

TO-263-3L

XXX YYYY

800

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-200

V

VGS

Gate-Source Voltage

± 20

V

ID@TC= 25°C

Continuous Drain Current

-13

A

ID@TC=100°C

Continuous Drain Current

-7.2

A

IDM

Pulsed Drain Current a

-52

A

EAS

Single Pulse Avalanche Energy b

750

mJ

IAR

Repetitive Avalanche Current a

-11

A

EAR

Repetitive Avalanche Energy a

13

mJ

PDTC=25°C

Maximum Power Dissipation

125

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55 to +150

°C

RthJA

Maximum Junction-to-Ambient

62

°C/W

RthJC

Maximum Junction-to-Case (Drain)

1.0

°C/W