AP13N50FIPIT-B

500V N-Channel Enhancement Mode MOSFET

AP13N50F/P/T-B REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . L=4.1Mh IAS=16A, VDD=50V, RG=25Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

500

V

IDSS

Zero Gate Voltage Drain Current

VDS=500V, VGS=0V

1

μA

VDS=400V, TC=125°C

10

μA

IGSSF

Gate-Body Leakage Current,Forward

VGS=30V, VDS=0V

100

nA

IGSSR

Gate-Body Leakage Current,Reverse

VGS=-30V, VDS=0V

-100

nA

VGS(TH)

Gate Threshold voltage

VDS=VGS, ID =250 uA

2.5

3.5

4.5

V

RDS(On)

Drain-Source on-state resistance

VGS=10V, ID=6.5A, TJ=25°C

420

500

mΩ

gFS

Forward Transconductance

VDS=40V, ID=6.5A (Note 4)

12.0

S

Ciss

Input capacitance

VDS=25V, VGS=0V, f=1.0 MHz

1175

pF

Coss

Output capacitance

176

pF

Crss

Reverse transfer capacitance

6

pF

td(on)

Turn On Delay Time

VDD = 250 V, ID = 13 A,

RG = 25 Ω

(Note 4, 5)

26

ns

tr

Rising Time

39

ns

td(off)

Turn Off Delay Time

87

ns

tf

Fall Time

42

ns

Qg

Total Gate Charge

VDS = 400 V, ID = 13 A,

VGS = 10 V

(Note 4, 5)

22

nC

Qgs

Gate-Source Charge

6.4

nC

Qgd

Gate-Drain Charge

6.8

nC

ISM

Maximum Pulsed Drain-Source Diode Forward Current

52

A

VSD

Diode Forward Voltage

VGS= 0 V, IS = 13 A

1.2

V

trr

Reverse Recovery Time

VGS = 0 V, IS = 13 A, dIF / dt = 100

A/μs Note 4)

334

ns

Qrr

Reverse Recovery Charge

2.6

μC