AP9N90FIPIT

900V N-Channel Enhancement Mode MOSFET

AP9N90F/P/T RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 μA

900

1000

V

ΔBVDSS/ ΔTJ Breakdown Voltage TemperatureCoefficient

ID=250μA, Referenced to25°C

0.74

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 900 V, VGS = 0 V

1

μA

IDSS

Zero Gate Voltage Drain Current

VDS = 720 V, TC = 125°C

10

μA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

-100

nA

VGS(TH)

Gate Threshold Voltage

VDS=VGS, ID =250 uA

2.0

4.0

V

RDS(On)

Drain-Source On-state Resistance

VGS=10 V, ID =4.5 A,

975

1200

mΩ

gFS

Forward Transconductance

VDS = 40 V, ID = 4.5 A

11

S

Ciss

Input Capacitance

VDS=25 V, VGS=0V, f=1.0 MHz

2752

pF

Coss

Output Capacitance

206

pF

Crss

Reverse Transfer Capacitance

36

pF

td(on)

Turn On Delay Time

VDD=450 V, ID=9A,

RG=25Ω

33

ns

tr

Rising Time

57

ns

td(off)

Turn Off Delay Time

270

ns

tf

Fall Time

91

ns

Qg

Total Gate Charge

VDS=450V, ID=9A,

VGS=10V

80

nC

Qgs

Gate-Source Charge

12

nC

Qgd

Gate-Drain Charge

38

nC

ISM

Maximum Pulsed Drain-Source Diode Forward Current

36

A

VSD

Diode Forward Voltage

VGS= 0 V, IS = 9 A

1.4

V

trr

Reverse Recovery Time

VGS=0V, IS=9A, dIF/dt=100 A/μs

Note4)

533

ns

Qrr

Reverse Recovery Charge

6.2

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . L=4.1Mh IAS=18A, VDD=50V, RG=25Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.