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AP12H02TS датащи(PDF) 4 Page - A POWER MICROELECTRONICS

номер детали AP12H02TS
подробное описание детали  20V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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производитель  APME [A POWER MICROELECTRONICS]
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AP12H02TS датащи(HTML) 4 Page - A POWER MICROELECTRONICS

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AP12H02TS
20V N+N-Channel Enhancement Mode MOSFET
AP12H02TS Rve:3.8
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
T C =25
o C
Single Pulse
10us
100us
1ms
10ms
DC
0
2
4
6
8
0
8
16
24
32
Q G , Total Gate Charge (nC)
I D =20 A
V DS =10V
0
400
800
1200
1600
2000
2400
1
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0
8
16
24
32
012
34
V GS , Gate-to-Source Voltage (V)
T j =150
o C
T j =25
o C
V DS =5V
T j = -55
o C
Operation in this area
limited by RDS(ON)
Q
VG
4.5V
QGS
QGD
QG
Charge
.
永源微電子科技有限公司



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