AP10P20DF

-200V P-Channel Enhancement Mode MOSFET

AP10P20DF REV1.0

永源微電子科技有限公司

P-Channel Electrical Characteristics (TJ =25 ℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VDS

Drain-Source Breakdown Voltage

VGS=0V, ID=- 250µA

-200

V

VGS(th)

Gate-Source Threshold Voltage

VDS=VGS, ID=-250µA

-2.0

-3.0

-4.0

V

IGSS

Gate-Source Leakage

VDS=0V, VGS=±20V

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=-200V, VGS=0V

- 1

µA

VDS=- 200V, VGS=0V, TJ=55 °C

- 10

RDS(on)

Drain-Source On-State Resistancea

VGS=-10V, ID=-1A

620

850

mΩ

VGS=-6V, ID=-1A

880

1100

gfs

Forward Transconductancea

VDS=-15V, ID=-1A

4

S

Ciss

Input Capacitance

VDS=-50V, VGS=0 V, f=1MHz

666

pF

Coss

Output Capacitance

36

Crss

Reverse Transfer Capacitance

25

Qg

Total Gate Charge

VDS=-100V, VGS=-10V, ID=-1A

16.2

25

nC

Qgs

Gate-Source Charge

VDS=-100V, VGS=-6V, ID =-1A

2.5

Qgd

Gate-Drain Charge

4.9

Rg

Gate Resistance

f = 1MHz

5.3

8

Ω

td(on)

Turn-On Delay Time

VDD=-100V, RL=100Ω ，

VGEN=- 6V, Rg=1Ω

16

25

ns

tr

Rise Time

16

25

td(off)

Turn-Off DelayTime

25

40

tf

Fall Time

16

25

td(on)

Turn-On Delay Time

VDD=-100V, RL=100Ω

VGEN=-10V, Rg=1Ω

9

15

tr

Rise Time

11

18

td(off)

Turn-Off DelayTime

27

42

tf

Fall Time

12

20

IS

Continuous Source-Drain Diode Current

TC=25 °C

- 5

A

ISM

Pulse Diode Forward Currenta

- 5

VSD

Body Diode Voltage

IS =-1 A

-0.8

- 1.2

V

trr

Body Diode Reverse Recovery Time

IF=-4A, dI/dt=100A/µs,

TJ= 25°C

66

90

ns

Qrr

Body Diode Reverse Recovery Charge

215

270

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD =-50V,VGS =-10V,L=0.5mH,IAS =-5A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.