AP10H10DF datasheet(1/7 Pages) APME

номер детали	AP10H10DF

подробное описание детали	100V NN-Channel Enhancement Mode MOSFET

PDF	7 Pages

Scroll/Zoom	100%

производитель	APME [A POWER MICROELECTRONICS]

домашняя страница

Logo

1 / 7 page

AP10H10DF

100V N+N-Channel Enhancement Mode MOSFET

AP10H10DF REV1.0

永源微電子科技有限公司

Description

The AP10H10DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 100V ID =10.3A

RDS(ON) < 120mΩ @ VGS=10V (Type：88mΩ)

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP10H10DF

PDFN3*3-8L

AP10H10DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Drain Current, VGS @ 10V

10.3

A

ID@TC=100℃

Drain Current, VGS @ 10V

6.5

A

IDM

Pulsed Drain Current1

24.3

A

PD@TC=25℃

Total Power Dissipation

1.5

W

EAS

Single Pulse Avalanche Energy4

61

mJ

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

85

℃

/W

RθJC

Maximum Thermal Resistance, Junction-case

8.1

℃

/W

Аналогичный номер детали - AP10H10DF

производитель	номер детали	датащи	подробное описание детали
A POWER MICROELECTRONIC...	AP10H10S	1Mb / 7P	100V NN-Channel Enhancement Mode MOSFET

More results

Аналогичное описание - AP10H10DF

производитель	номер детали	датащи	подробное описание детали
Zetex Semiconductors	ZXMN10A11G	1Mb / 7P	100V N-CHANNEL ENHANCEMENT MODE MOSFET
Zetex Semiconductors	ZXMN10B08E6	252Kb / 7P	100V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated	ZXMN10A08DN8	185Kb / 7P	100V N-CHANNEL ENHANCEMENT MODE MOSFET JANUARY 2005
	ZXMN10A09K	660Kb / 8P	100V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 7
	ZXMN10A11K	670Kb / 8P	100V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 2
	DMT10H015LK3	533Kb / 7P	100V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 4
Shanghai Leiditech Elec...	LMTL5N10	6Mb / 5P	100V N-Channel Enhancement Mode MOSFET
DONGGUAN YOU FENG WEI E...	YFW8H10S	1Mb / 5P	100V NN-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
	YFW10H10S	1Mb / 5P	100V NN-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1
	YFWG40H10NF	1Mb / 5P	100V NN-CHANNEL ENHANCEMENT MODE MOSFET Rev:2021Y1

More results

AP10H10DF датащи(PDF) 1 Page - A POWER MICROELECTRONICS

AP10H10DF датащи(HTML) 1 Page - A POWER MICROELECTRONICS

Аналогичный номер детали - AP10H10DF

Аналогичное описание - AP10H10DF

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL