AP8P10MSI

-100V P-Channel Enhancement Mode MOSFET

AP8P10MSI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250μA

-100

117

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = -100V, VGS = 0V

-

-

1

μA

IGSS

Gate to Body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = -250μA

-1.2

-1.85

-2.5

V

RDS(on)

Static Drain-Source On-Resistance note1

VGS = -10V, ID = -5A

-

250

300

mΩ

VGS = -4.5V, ID = -3A

-

260

340

Ciss

Input Capacitance

VDS = -50V, VGS = 0V,

f = 1.0MHz

-

760

-

pF

Coss

Output Capacitance

-

25

-

pF

Crss

Reverse Transfer Capacitance

-

12

-

pF

Qg

Total Gate Charge

VDD = -50V, ID = -5A,

VGS = -10V

-

11.5

-

nC

Qgs

Gate-Source Charge

-

1.3

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

2.9

-

nC

td(on)

Turn-On Delay Time

VDS = -50V, ID = -5A

RG=4.5Ω, RL=25Ω

VGEN = - 10 V

-

12

-

ns

tr

Turn-On Rise Time

-

5

-

ns

td(off)

Turn-Off Delay Time

-

35

-

ns

tf

Turn-Off Fall Time

-

20

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-12.8

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS =-1A

-

-

-1.3

V

trr

Reverse Recovery Time

VGS = 0V, Isd= -3A, di/dt

=100A/μs

-

25

-

nS

Qrr

Reverse Recovery Charge

-

20

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175

℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.