AP6G02BLI datasheet(1/10 Pages) APME

номер детали	AP6G02BLI

подробное описание детали	20V NP-Channel Enhancement Mode MOSFET

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AP6G02BLI

20V N+P-Channel Enhancement Mode MOSFET

AP6G02BLI RVE1.0

永源微電子科技有限公司

Description

The AP6G02BLI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =6.5A

RDS(ON) < 30mΩ @ VGS=4.5V （Type：20mΩ）

VDS = -20V ID =-5.5A

RDS(ON) < 58mΩ @ VGS=-4.5V（Type：46mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP6G02BLI

SOT23-6L

AP6G02BLI

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

20

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

6.5

-5.5

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

3.5

-3.1

A

IDM

Pulsed Drain Current2

24

A

EAS

Single Pulse Avalanche Energy3

12

mJ

PD@TA=25℃

Total Power Dissipation4

1.5

W

TSTG

Operating Junction Storage Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

105

℃/W

RθJC

Thermal Resistance Junction-Case1

45

℃/W

Аналогичный номер детали - AP6G02BLI

производитель	номер детали	датащи	подробное описание детали
A POWER MICROELECTRONIC...	AP6G02BF	1Mb / 10P	20V NP-Channel Enhancement Mode MOSFET REV1.0

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Аналогичное описание - AP6G02BLI

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Аналогичный номер детали - AP6G02BLI

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