AP5N15MSI datasheet(1/7 Pages) APME

номер детали	AP5N15MSI

подробное описание детали	150V N-Channel Enhancement Mode MOSFET

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AP5N15MSI

150V N-Channel Enhancement Mode MOSFET

AP5N15MSI RVE1.0

永源微電子科技有限公司

Description

The AP5N15MSI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 150V ID =5A

RDS(ON) < 320mΩ@ VGS=10V （Type：260mΩ）

Application

Automative lighting

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP5N15MSI

SOT -223-3L

AP5N15MSI XXX YYYY

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

150

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Drain Current, VGS @ 10V

5

A

ID@TC=100

℃

Drain Current, VGS @ 10V

3.1

A

IDM

Pulsed Drain Current1

15

A

PD@TC=25

℃

Total Power Dissipation

2

W

PD@TA=25

℃

Total Power Dissipation3

1.1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

70

℃/W

RθJC

Maximum Thermal Resistance, Junction-case

36

℃/W

Аналогичный номер детали - AP5N15MSI

производитель	номер детали	датащи	подробное описание детали
A POWER MICROELECTRONIC...	AP5N15SI	609Kb / 7P	150V N-Channel Enhancement Mode MOSFET

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Аналогичный номер детали - AP5N15MSI

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