TO-220FP datasheet(1/3 Pages) CDIL

номер детали	TO-220FP

подробное описание детали	NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR

PDF	3 Pages

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производитель	CDIL [Continental Device India Limited]

домашняя страница	http://www.cdilsemi.com

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NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR

Low Freq. Power Amp.

Built in Damper Diode

Complementry CSB1342

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

80

V

Collector -Emitter Voltage

VCEO

80

V

Emitter Base Voltage

VEBO

7.0

V

Collector Current DC

IC

4.0

A

Collector Current (Pulse*)

6.0

A

Collector Power Dissipation @ Ta=25 deg C

PC

2.0

W

Collector Power Dissipation @ Tc=25 deg C

30

W

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-55 to +150

deg C

*Single Pulse Pw=100ms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Voltage

VCEO

IC=1mA, IB=0

80

-

V

Collector Base Voltage

VCBO

IC=50uA, IE=0

80

-

V

Collector Cut off Current

ICBO

VCB=80V, IE=0

-

100

uA

Emitter Cut off Current

IEBO

VEB=5V,IC=0

-

3.0

mA

Collector Emitter Saturation Voltage

VCE(Sat)** IC=2A,IB=4mA

-

1.5

V

DC Current Gain

hFE**

IC=2A, VCE=3V

1.0

-

10

K

Dynamic Characteristics

Transition Frequency

ft

VCE=5V,IC=0.2A,

-

40

-

MHz

f=10MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0

-

35

-

pF

f=1MHz

**Pulse test

Continental Device India Limited

Data Sheet

Page 1 of 2

E

C

B

TO-220FP Fully Isolated

CFD1933

Plastic Package

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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