AP4P05AI datasheet(1/7 Pages) APME

номер детали	AP4P05AI

подробное описание детали	-55V P-Channel Enhancement Mode MOSFET

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AP4P05AI

-55V P-Channel Enhancement Mode MOSFET

AP4P05AI RVE1.0

永源微電子科技有限公司

Description

The AP4P05AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=-55V ID=-4.0A

RDS(ON) < 150mΩ @ VGS=-10V (Type：115mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4P05AI

SOT23L

4P05A-AP

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-55

V

VGS

Gate-Source Voltage

±20

V

ID@TA=25

℃

Continuous Drain Current, VGS @ -10V1

-4.0

A

ID@TA=70

℃

Continuous Drain Current, VGS @ -10V1

-2.3

A

IDM

Pulsed Drain Current2

-16

A

PD@TA=25

℃

Total Power Dissipation3

1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃/W

RθJC

Thermal Resistance Junction-Case1

80

℃/W

Аналогичный номер детали - AP4P05AI

производитель	номер детали	датащи	подробное описание детали
Advanced Power Electron...	AP4P052H	75Kb / 6P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electron...	AP4P052J	74Kb / 6P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
A POWER MICROELECTRONIC...	AP4P05MI	1Mb / 7P	-55V P-Channel Enhancement Mode MOSFET

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Аналогичное описание - AP4P05AI

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List of Unclassifed Man...	SI9405DY	156Kb / 4P	P-Channel Enhancement-Mode MOSFET
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Stanson Technology	ST2301A	221Kb / 6P	P Channel Enhancement Mode MOSFET
HY ELECTRONIC CORP.	HY110N06T	252Kb / 4P	55V / 110A N-Channel Enhancement Mode MOSFET
MORE Semiconductor Comp...	MSP0505W	462Kb / 6P	-55V(D-S) P-Channel Enhancement Mode Power MOS FET
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