AP4N90FIPIT

900V N-Channel Enhancement Mode MOSFET

AP4N90F/P/T REV1.0

永源微電子科技有限公司

Description

The AP4N90F/P/T is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 900V ID =4.0A

RDS(ON) < 3500mΩ @ VGS=10V （Type：3000mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4N90F

TO-220F-3L

AP4N90F XXX YYYY

1000

AP4N90P

TO-220-3L

AP4N90P XXX YYYY

1000

AP4N90T

TO-263-3L

AP4N90T XXX YYYY

800

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Units

VDSS

Drain-Source Voltage

900

V

VGS

Gate-Source Voltage

± 30

V

ID@TC=25

℃

Drain Current, VGS @ 10V

4.0

A

ID@TC=100

℃

Drain Current, VGS @ 10V

2.1

A

IDM

Drain Current - Pulsed

16

A

EAS

Single Pulsed Avalanche Energy

125

mJ

IAS

Avalanche Current

6

A

EAR

Repetitive Avalanche Energy

0.72

mJ

PD

Power Dissipation

25

W

Tj ,Tstg

Operating and Storage Temperature Range

-55 to +150

oC

RθJC

Thermal Resistance, Junction-to-Case

5.0

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

62.5

°C/W