AP4N25DF datasheet(1/7 Pages) APME

номер детали	AP4N25DF

подробное описание детали	250V N-Channel Enhancement Mode MOSFET

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AP4N25DF

250V N-Channel Enhancement Mode MOSFET

AP4N25DF REV1.0

永源微電子科技有限公司

Description

The AP4N25DF uses advanced APM-SGT III technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 250V ID =4.0A

RDS(ON) < 650mΩ@ VGS=10V （Type：500mΩ）

Application

Automative lighting

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4N25DF

PDFN3X3-8L

AP4N25DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

250

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Drain Current, VGS @ 10V

5

A

ID@TC=100

℃

Drain Current, VGS @ 10V

3

A

IDM

Pulsed Drain Current1

20

A

PD@TC=25

℃

Total Power Dissipation

60

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

85

℃/W

RθJC

Maximum Thermal Resistance, Junction-case

2.4

℃/W

Аналогичный номер детали - AP4N25DF

производитель	номер детали	датащи	подробное описание детали
A POWER MICROELECTRONIC...	AP4N25MI	709Kb / 7P	250V N-Channel Enhancement Mode MOSFET

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Аналогичное описание - AP4N25DF

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Zetex Semiconductors	ZVN4525E6	426Kb / 8P	250V N-CHANNEL ENHANCEMENT MODE MOSFET
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Diodes Incorporated	ZVN4525E6	437Kb / 8P	250V N-CHANNEL ENHANCEMENT MODE MOSFET MARCH 2001
	ZVN4525G	419Kb / 8P	250V N-CHANNEL ENHANCEMENT MODE MOSFET MARCH 2001
	ZVN4525Z	443Kb / 8P	250V N-CHANNEL ENHANCEMENT MODE MOSFET MARCH 2001
	ZVN4525E6	1Mb / 7P	250V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 2
	ZVN4525G	295Kb / 7P	250V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 2
Cystech Electonics Corp...	MTB1K8N25N3	651Kb / 9P	250V N-Channel Enhancement Mode MOSFET

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