AP4HV02LI datasheet(1/10 Pages) APME

номер детали	AP4HV02LI

подробное описание детали	20V NNPP-Channel Enhancement Mode MOSFET

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AP4HV02LI

20V NN+PP-Channel Enhancement Mode MOSFET

AP4HV02LI REV1.0

永源微電子科技有限公司

Description

The AP4HV02LI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =4.5A

RDS(ON) < 45mΩ @ VGS=4.5V （Type：30mΩ）

VDS = -20V ID =-3.8A

RDS(ON) < 85mΩ @ VGS=-4.5V（Type：65mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4HV02LI

SOT23-6L

AP4HV02LI

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

20

-20

V

VGS

Gate-Source Voltage

±

20

±

20

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

4.5

-3.8

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

3.0

-2.5

A

IDM

Pulsed Drain Current2

52

-40

A

EAS

Single Pulse Avalanche Energy3

12

18

mJ

PD@TA=25℃

Total Power Dissipation4

1.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

105

℃

/W

RθJC

Thermal Resistance Junction-Case1

50

℃

/W

Аналогичный номер детали - AP4HV02LI

производитель	номер детали	датащи	подробное описание детали
Knowles Electronics	AP4HV	3Mb / 60P	Introduction to Knowles Precision Devices

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Аналогичное описание - AP4HV02LI

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Cystech Electonics Corp...	MTN2300N3	476Kb / 5P	20V N-CHANNEL Enhancement Mode MOSFET
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