AP3P10DF

-100V P-Channel Enhancement Mode MOSFET

AP3P10DF REV1.1

永源微電子科技有限公司

Electrical Characteristics (TJ =25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-100

-117

---

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V , ID=-3A

---

400

500

mΩ

VGS=-4.5V , ID=-2A

---

480

600

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.2

-1.8

-2.5

V

IDSS

Drain-Source Leakage Current

VDS=-100V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-100V , VGS=0V , TJ=85℃

---

---

-100

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±

100

nA

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

16

---

Ω

Qg

Total Gate Charge

VDS=-15V, VGS=-4.5V,

ID=-0.5A

---

4.5

---

nC

Qgs

Gate-Source Charge

---

1.14

---

Qgd

Gate-Drain Charge

---

1.5

---

Td(on)

Turn-On Delay Time

VDD=-50V , VGS=-10V ,

RG=3.3Ω,ID=-0.5A

---

17.6

---

ns

Tr

Rise Time

---

2.7

---

Td(off)

Turn-Off Delay Time

---

4.5

---

Tf

Fall Time

---

3

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

195

---

pF

Coss

Output Capacitance

---

56

---

Crss

Reverse Transfer Capacitance

---

29

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-3.0

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.