AP3N06MI

60V N-Channel Enhancement Mode MOSFET

AP3N06MI RVE3.9

永源微電子科技有限公司

Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

60

65

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=5A

---

70

85

mΩ

VGS=4.5V , ID=5A

---

85

95

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.5

V

IDSS

Drain-Source Leakage Current

VDS=48V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=48V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±

100

nA

gfs

Forward Transconductance

VDS=5V , ID=5A

---

7

---

S

Qg

Total Gate Charge (10V)

VDS=12V , VGS=10V , ID=5A

---

5.5

---

nC

Qgs

Gate-Source Charge

---

1.8

---

Qgd

Gate-Drain Charge

---

2.4

---

Td(on)

Turn-On Delay Time

VDD=12V , VGS=10V , RG=3.3

ID=5A

---

6

---

ns

Tr

Rise Time

---

10

---

Td(off)

Turn-Off Delay Time

---

15

---

Tf

Fall Time

---

7

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

695

---

pF

Coss

Output Capacitance

---

148

---

Crss

Reverse Transfer Capacitance

---

7

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

17

A

ISM

Pulsed Source Current2,5

---

---

50

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25℃

---

---

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150

℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.