30V N+P-Channel Enhancement Mode MOSFET

AP3G03LI Rve1.0

臺灣永源微電子科技有限公司

N-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

V(BR)DSS

Drain-source

breakdown

voltage

VGS = 0V, ID = 250µA

30

V

VGS(th)

Gate-source

threshold

voltage

VDS =VGS, ID = 250µA

0.6

1.4

V

IGSS

Gate-body

leakage

current

VDS =0V, VGS = ±12V

±100

nA

IDSS

Zero gate voltage drain current

VDS = 30V, VGS =0V

1

µA

RDS(on)

Static Drain-Source On-Resistance

VGS = 10V, ID = 3.4A

50

60

mΩ

VGS = 4.5V, ID = 3A

60

75

mΩ

VGS = 2.5V, ID = 2.8A

88

115

mΩ

gfs

Forward

transconductancea

VDS = 5V, ID = 4A

8

S

VSD

Diode forward voltage

IS= 1A,VGS=0V

0.8

1.3

V

IS

Maximum Body-Diode Continuous

Current

1.5

A

Ciss

Input

capacitance

VDS = 15V, VGS =0V,

f=1MHz

390

pF

Coss

Output

capacitance

54.5

pF

Crss

Reverse

transfer

capacitanceb

41

pF

Qg

Total gate charge

VDS = 15V,

VGS = 10V, ID =4A

4.5

nC

Qgs

Gate-source charge

1.4

nC

Qgd

Gate-drain charge

0.6

nC

Rg

Gate

resistance

f=1MHz

3

Ω

td(on)

Turn-on delay time

VDS= 15V

RL=5Ω, ID =4A,

VGS= 10V,Rg=6Ω

4

ns

tr

Rise time

2

ns

td(off)

Turn-off delay time

22

ns

tf

Fall time

3

ns

Trr

Body Diode Reverse Recovery Time

IF=4A, dI/dt=100A/µs

11

ns

Qrr

Body Diode Reverse Recovery Charge

IF=4A, dI/dt=100A/µs

5.5

nC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t < 10 sec.

3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing

AP3G03LI