AP2N7002AI datasheet(1/7 Pages) APME

номер детали	AP2N7002AI

подробное описание детали	60V N-Channel Enhancement Mode MOSFET

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производитель	APME [A POWER MICROELECTRONICS]

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60V N-Channel Enhancement Mode MOSFET

Package Marking and Ordering Information

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current (TJ =150℃)

TA =25℃

ID

0.3

A

TA =100℃

0.19

Drain Current-Pulsed (Note 1)

IDM

0.8

A

Maximum Power Dissipation

PD

0.35

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

350

℃

/W

AP2N7002AI

Description

The AP2N7002AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 60V ID =0.3A

RDS(ON) < 3Ω @ VGS=10V

ESD Rating：HBM≥2000V

Application

Battery protection

Load switch

Uninterruptible power supply

72K

AP2N7002AI

Product ID

Pack

SOT23L

Marking

Qty(PCS)

3000

AP2N7002AI Rve3.8

永源微電子科技有限公司

Аналогичный номер детали - AP2N7002AI

производитель	номер детали	датащи	подробное описание детали
A POWER MICROELECTRONIC...	AP2N7002AJ	797Kb / 7P	60V N-Channel Enhancement Mode MOSFET REV1.0
	AP2N7002AK	592Kb / 7P	60V N-Channel Enhancement Mode MOSFET REV1.0
	AP2N7002AL	708Kb / 7P	60V N-Channel Enhancement Mode MOSFET REV1.0

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Аналогичное описание - AP2N7002AI

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Taiwan Semiconductor Co...	TSM2N7002	129Kb / 3P	60V N-Channel Enhancement Mode MOSFET
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Pan Jit International I...	2N7002DW	155Kb / 5P	60V N-Channel Enhancement Mode MOSFET
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Аналогичный номер детали - AP2N7002AI

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