MBRB10H100 datasheet(1/2 Pages) ISC

номер детали	MBRB10H100

подробное описание детали	Schottky Barrier Diode

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Schottky Barrier Diode

MBRB10H100

www.iscsemi.com

1

FEATURES

· Guarding for Overvoltage Protection

· Metal Silicon Junction, Majority Carrier Conduction

· Low Power Loss, High Efficiency

APPLICATIONS

· Free Wheeling Diode

· High Frequency Inverters

· Polarity Protection Applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V

IF(AV)

Average Rectified Forward Current

10

A

IFSM

Non-repetitive Peak Surge Current

(8.3ms Single Half Sine-Wave

Superimposed on Rated Load)

250

A

TJ

Max. Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.7

℃

/W

Аналогичный номер детали - MBRB10H100

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Vishay Siliconix	MBRB10H100	114Kb / 3P	High Voltage Schottky Rectifiers 01-Jul-02
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Kersemi Electronic Co.,...	MBRB10H100	1Mb / 3P	Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
Vishay Siliconix	MBRB10H100	148Kb / 5P	High Voltage Schottky Rectifier 08-Jun-2018
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Аналогичное описание - MBRB10H100

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NXP Semiconductors	1PS74SB43	49Kb / 8P	Schottky barrier diode 1999 Dec 10
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MBRB10H100 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

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Аналогичный номер детали - MBRB10H100

Аналогичное описание - MBRB10H100

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