AP8P10S

-100V P-Channel Enhancement Mode MOSFET

AP8P10S RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-100

-110

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=- 6A

---

83

110

mΩ

VGS=-4.5V , ID=-3A

---

95

120

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.2

-1.8

-2.5

V

IDSS

Drain-Source Leakage Current

VDS=-100V , VGS=0V , TJ=25℃

---

---

-50

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-10V , ID=-10A

---

24

---

S

Qg

Total Gate Charge

VDS=-50V , VGS=-10V , ID=-20A

---

20.1

---

nC

Qgs

Gate-Source Charge

---

3.9

---

Qgd

Gate-Drain Charge

---

4.3

---

Td(on)

Turn-On Delay Time

VDD=-50V , VGS=-10V ,

RG=3.3 ,

ID=-10A

---

10

---

ns

Tr

Rise Time

---

30

---

Td(off)

Turn-Off Delay Time

---

77

---

Tf

Fall Time

---

81

---

Ciss

Input Capacitance

VDS=-20V , VGS=0V , f=1MHz

---

1051

---

pF

Coss

Output Capacitance

---

119

---

Crss

Reverse Transfer Capacitance

---

25

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-15

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

---

---

-1.2

V

trr

Reverse Recovery Time

IF=-8A , di/dt=-100A/µs ,

TJ=25

---

81

---

nS

Qrr

Reverse Recovery Charge

---

140

---

nC

Notes:

1、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2、The test condition is, VDD=80V,VG=10V RG =25Ω, L=0.1mH.

3、The data tested by pulsed Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

4、The power dissipation is limited by 150℃ junction temperature

℃

℃