AP4N80FIP

800V N-Plance Enhancement Mode MOSFET

AP4N80F/P Rve3.8

臺灣永源微電子科技有限公司

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

800

-

-

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V, ID=2A

-

-

2.5

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

2.5

-

4.5

V

gfs

Forward Transconductance

VDS=20V, ID=2A

-

5.3

-

S

IDSS

Drain-Source Leakage Current

VDS=640V, VGS=0V

-

-

100

uA

IGSS

Gate-Source Leakage

VGS=+30V, VDS=0V

-

-

+1

uA

Qg

Total Gate Charge

ID=4A

VDS=640V

VGS=10V

-

27

43.2

nC

Qgs

Gate-Source Charge

-

4

-

nC

Qgd

Gate-Drain ("Miller") Charge

-

15

-

nC

td(on)

Turn-on Delay Time

VDD=400V

ID=4A

RG=25Ω

VGS=10V

-

14

-

ns

tr

Rise Time

-

30

-

ns

td(off)

Turn-off Delay Time

-

69

-

ns

tf

Fall Time

-

34

-

ns

Ciss

Input Capacitance

VGS=0V

VDS=100V f=1.0MHz.

-

680

1088

pF

Coss

Output Capacitance

-

40

-

pF

Crss

Reverse Transfer Capacitance

-

10

-

pF

Rg

Gate Resistance

f=1.0MHz

-

3.7

7.4

Ω

VSD

Forward On Voltage2

IS=4A, VGS=0V

-

-

1.5

V

trr

Reverse Recovery Time

IS=4A, VGS=0V dI/dt=100A/µs

-

430

-

ns

Qrr

Reverse Recovery Charge

-

1.9

-

uC

Notes:

1.Pulse width limited by max. junction temperature.

2.Pulse test

3.Ensure that the junction temperature does not exceed TJmax..