AP4N06AI

60V N-Channel Enhancement Mode MOSFET

AP4N06AI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

60

66

V

IDSS

Zero Gate Voltage Drain Current

VDS=60V,VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

nA

VGS=±10V, VDS=0V

±50

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

0.9

1.3

2.0

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=3A

62

85

mΩ

VGS=4.5V, ID=2A

85

120

Ciss

Input Capacitance

VDS=10V,VGS=0V,f=1MHZ

409

pF

Coss

Output Capacitance

50

pF

Crss

Reverse Transfer Capacitance

41

pF

Qg

Total Gate Charge

VGS=10V,VDS=30V,ID=3A

10.27

nC

Qgs

Gate-Source Charge

1.65

nC

Qgd

Gate-Drain Charge

2.11

nC

Qrr

Reverse Recovery Chrage

IF=3A, di/dt=100A/us

6.99

nC

trr

Reverse Recovery Time

32.6

ns

tD(on)

Turn-on Delay Time

VGS=10V, VDS=30V,

RL=20Ω

RGEN=3Ω

3.6

ns

tr

Turn-on Rise Time

17.6

ns

tD(off)

Turn-off Delay Time

13

ns

tf

Turn-off fall Time

23

ns

VSD

Diode Forward Voltage

IS=4A,VGS=0V

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.