AP2N7002AL

60V N-Channel Enhancement Mode MOSFET

AP2N7002AL REV1.0

永源微電子科技有限公司

Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= 250µA

60

72

-

V

IGSS

Gate leakage Current

VGS= ±20V, VDS= 0V

-

-

±10

µA

IDSS

Drain Cut-off Current

VDS= 60V, VGS= 0V

-

-

1

µA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= 250µA

1.0

1.3

2.0

V

RDS(on)

Drain-Source On-state

Resistance3

VGS= 10V, ID= 0.3A

-

1100

1600

mΩ

VGS= 4.5V, ID= 0.2A

-

1300

2000

mΩ

Ciss

Input Capacitance

V DS = 30V, V GS = 0V,

f = 1MHz

25

pF

Coss

Output Capacitance

5.6

pF

Crss

Reverse Transfer Capacitance

2.2

pF

Qg

Total Gate Charge

VGS = 4.5V, VDS = 30V,

ID = 0.3A

-

0.61

-

nC

Qgs

Gate-Source Charge

-

0.27

-

nC

Qgd

Gate-Drain Charge

-

0.23

-

nC

td(on)

Turn-on Delay Time

VGS = 10V,VDD = 30V,

ID = 0.3A, RG= 3Ω

-

4.3

-

ns

tr

Turn-on Rise Time

-

2.4

-

ns

td(off)

Turn-off Delay Time

-

21

-

ns

tf

Turn- off Fall Time

-

14.5

-

ns

VSD

Diode Forward Voltage3

IS= 0.3A ,VGS=0V,

-

-

1.5

V

IS

Continuous Source Current

-

-

-

0.5

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.