AP13N90MP

900V N-Channel Enhancement Mode MOSFET

AP13N90MP RVE1.0

永源微電子科技有限公司

Description

The AP13N90MP is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 900V ID =13A

RDS(ON) < 700mΩ @ VGS=10V （Type：600mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP13N90MP

TO-247-3L

AP13N90MP XXX YYYY

1000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Units

VDSS

Drain-Source Voltage

900

V

VGS

Gate-Source Voltage

± 30

V

ID@TC=25

℃

Drain Current, VGS @ 10V

13

A

ID@TC=100

℃

Drain Current, VGS @ 10V

6.8

A

IDM

Drain Current - Pulsed

52

A

EAS

Single Pulsed Avalanche Energy

480

mJ

IAR

Avalanche Current

9.6

A

EAR

Repetitive Avalanche Energy

1.84

mJ

PD

Power Dissipation

278

W

Tj ,Tstg

Operating and Storage Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction-to-Case

0.45

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

40

°C/W