2SC4977 datasheet(1/2 Pages) ISC

номер детали	2SC4977

подробное описание детали	Silicon NPN Power Transistor

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC4977

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 400V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): 0.8V(Max) @IC= 4.0A

APPLICATIONS

· Switching Regulators

· DC-DC Converter

· Inverters

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

450

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Peak

14

A

PC

Total Power Dissipation

40

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.125

℃

/W

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