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M24512

Table 11. Input Parameters

2. Sampled only, not 100% tested.

3. E2,E1,E0: Input impedance when the memory is selected (after a Start condition).

Table 12. DC Characteristics (M24512 – W)

Note: 1. When the device is selected (after a START condition), the Ei inputs have a different input impedance, as defined in Table 11.

Note: 1. The information contained in Table 13. is related to the new M24512 (process letter “A”) and is subject to change without previous

notice.

Symbol

Test Condition

Min.

Max.

Unit

Input Capacitance (SDA)

8

pF

Input Capacitance (other pins)

6

pF

Input Impedance

(E2, E1, E0, WC)

30

k

Ω

Input Impedance

(E2, E1, E0, WC)

500

k

Ω

Pulse width ignored

(Input Filter on SCL and SDA)

Single glitch

100

ns

Symbol

Parameter

Test Condition

Min.

Max.

Unit

Input Leakage Current

(SCL, SDA, E0, E1, E2)

± 2

µA

Output Leakage Current

± 2

µA

Supply Current

1mA

2mA

Stand-by Supply Current

2µA

5

µA

Input Low Voltage

(SCL, SDA, WC)

–0.45

V

Input High Voltage

(SCL, SDA, WC)

V

Output Low Voltage

0.4

V

Symbol

Parameter

Test Condition

Min.

Max.

Unit

Input Leakage Current

(SCL, SDA, E2, E1, E0)

device in Stand-by mode

± 2

µA

Output Leakage Current

± 2

µA

Supply Current

30ns)

1mA

Standby Supply Current

2µA

Input Low Voltage

–0.45

V

Input High Voltage

V

Output Low Voltage

0.2

V