IRFP4310ZPBF datasheet(4/8 Pages) IRF

номер детали	IRFP4310ZPBF

подробное описание детали	HEXFET Power MOSFET

PDF	8 Pages

Scroll/Zoom	100%

производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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IRFP4310ZPbF

www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 10. Drain-to-Source Breakdown Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 11. Typical COSS Stored Energy

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 12. Maximum Avalanche Energy Vs. DrainCurrent

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VSD, Source-to-Drain Voltage (V)

0.1

100

1000

TJ = 25°C

TJ = 175°C

VGS = 0V

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

100

110

120

130

ID = 5mA

100

VDS, Drain-to-Source Voltage (V)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

100

125

150

175

Starting TJ, Junction Temperature (°C)

100

200

300

400

500

600

I D

TOP

11A

19A

BOTTOM

75A

0.1

100

VDS, Drain-toSource Voltage (V)

0.1

100

1000

10000

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100μsec

100

125

150

175

TC, Case Temperature (°C)

100

120

140

LIMITED BY PACKAGE

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