Potens semiconductor corp.

Ver.1.00

2

PDU69C4Z

60V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

60

---

---

V

IDSS

Drain-Source Leakage Current

VDS=60V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=48V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance3

VGS=10V , ID=1.2A

---

90

108

m



VGS=4.5V , ID=1A

---

103

135

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.7

2.5

V

gfs

Forward Transconductance

VDS=10V , ID=1A

---

1.7

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=30V , VGS=10V , ID=0.6A

---

4.3

6.5

nC

Qgs

Gate-Source Charge2 , 3

---

0.4

3

Qgd

Gate-Drain Charge2 , 3

---

0.8

3

Td(on)

Turn-On Delay Time2 , 3

VDD=30V , VGS=10V , RG=6



ID=0.6A

---

1

2

ns

Tr

Rise Time2 , 3

---

2.5

4

Td(off)

Turn-Off Delay Time2 , 3

---

3

5

Tf

Fall Time2 , 3

---

4

6

Ciss

Input Capacitance

VDS=30V , VGS=0V , F=1MHz

---

205

310

pF

Coss

Output Capacitance

---

20

30

Crss

Reverse Transfer Capacitance

---

12

20

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

5.3

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

1.2

A

ISM

Pulsed Source Current

---

---

2.4

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Trr

Reverse Recovery Time

VR=50V, IS=4A

di/dt=100A/µs, TJ=25℃

---

15

---

ns

Qrr

Reverse Recovery Charge

---

10

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings