GP50B60PD datasheet(2/10 Pages) IRF

2 / 10 page

IRGP50B60PD

www.irf.com

Notes:

RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID

rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.

VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω.

Pulse width limited by max. junction temperature.

Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.

Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.

Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Conditions

Ref.Fig

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, IC = 500µA

∆V(BR)CES/∆TJ

Temperature Coeff. of Breakdown Voltage

—0.61

—

V/°C VGE = 0V, IC = 1mA (25°C-125°C)

Internal Gate Resistance

—

1.2

—

Ω

1MHz, Open Collector

—2.0

2.2

IC = 33A, VGE = 15V

4, 5,6,8,9

VCE(on)

Collector-to-Emitter Saturation Voltage

—

2.4

2.6

IC = 50A, VGE = 15V

—2.6

2.9

IC = 33A, VGE = 15V, TJ = 125°C

—3.2

3.6

IC = 50A, VGE = 15V, TJ = 125°C

VGE(th)

Gate Threshold Voltage

3.0

4.0

5.0

IC = 250µA

7,8,9

∆VGE(th)/∆TJ

Threshold Voltage temp. coefficient

—

-7.07

—

mV/°C VCE = VGE, IC = 1.0mA

gfe

Forward Transconductance

—

VCE = 50V, IC = 33A, PW = 80µs

ICES

Collector-to-Emitter Leakage Current

—

5.0

500

µA

VGE = 0V, VCE = 600V

—1.0

—

mA VGE = 0V, VCE = 600V, TJ = 125°C

—1.3

1.7

IF = 25A, VGE = 0V

VFM

Diode Forward Voltage Drop

—

1.5

2.0

IF = 50A, VGE = 0V

—1.3

1.7

IF = 25A, VGE = 0V, TJ = 125°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V, VCE = 0V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Ref.Fig

Total Gate Charge (turn-on)

—

240

360

IC = 33A

Qgc

Gate-to-Collector Charge (turn-on)

—

nC VCC = 400V

CT1

Qge

Gate-to-Emitter Charge (turn-on)

—

130

VGE = 15V

Eon

Turn-On Switching Loss

—

360

590

IC = 33A, VCC = 390V

CT3

Eoff

Turn-Off Switching Loss

—

380

420

µJ

VGE = +15V, RG = 3.3Ω, L = 210µH

Etotal

Total Switching Loss

—

740

960

TJ = 25°C

fÃÃ

td(on)

Turn-On delay time

—

IC = 33A, VCC = 390V

CT3

Rise time

—

VGE = +15V, RG = 3.3Ω, L = 210µH

td(off)

Turn-Off delay time

—

130

140

TJ = 25°C fÃÃ

Fall time

—

Eon

Turn-On Switching Loss

—

610

880

IC = 33A, VCC = 390V

CT3

Eoff

Turn-Off Switching Loss

—

460

530

µJ

VGE = +15V, RG = 3.3Ω, L = 210µH

11,13

Etotal

Total Switching Loss

—

1070

1410

TJ = 125°C f

WF1,WF2

td(on)

Turn-On delay time

—

IC = 33A, VCC = 390V

CT3

Rise time

—

VGE = +15V, RG = 3.3Ω, L = 200µH

12,14

td(off)

Turn-Off delay time

—

140

160

TJ = 125°CÃfÃÃ

WF1,WF2

Fall time

—

Cies

Input Capacitance

—

4750

—

VGE = 0V

Coes

Output Capacitance

—

390

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1Mhz

Coes eff.

Effective Output Capacitance (Time Related)

—

280

—

VGE = 0V, VCE = 0V to 480V

Coes eff. (ER) Effective Output Capacitance (Energy Related) g

—

190

—

TJ = 150°C, IC = 150A

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

VCC = 480V, Vp =600V

CT2

Rg = 22

Ω, VGE = +15V to 0V

trr

Diode Reverse Recovery Time

—

TJ = 25°C

IF = 25A, VR = 200V,

—

105

160

TJ = 125°C

di/dt = 200A/µs

Qrr

Diode Reverse Recovery Charge

—

112

375

nC TJ = 25°C

IF = 25A, VR = 200V,

—

420

4200

TJ = 125°C

di/dt = 200A/µs

Irr

Peak Reverse Recovery Current

—

4.5

TJ = 25°C

IF = 25A, VR = 200V,

19,20,21,22

—8.0

TJ = 125°C

di/dt = 200A/µs

CT5

Conditions

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