IRFP254A datasheet(2/7 Pages) IRF

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Electrical Characteristics (T

C=25°C unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain ( Miller ) Charge

gfs

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

BVDSS

∆BV/∆T

VGS(th)

RDS(on)

IGSS

IDSS

°C

µA

Ω

VGS=0V,ID=250µA

ID=250µA

See Fig 7

VDS=5V,ID=250µA

VGS=30V

VGS=-30V

VDS=250V

VDS=200V,TC=125°C

VGS=10V,ID=12.5A

(4)

VDS=40V,ID=12.5A

(4)

VDD=125V,ID=25A,

RG=5.3Ω

See Fig 13

(4) (5)

VDS=200V,VGS=10V,

ID=25A

See Fig 6 & Fig 12 (4) (5)

Drain-to-Source Leakage Current

VGS=0V,VDS=25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

(1)

Diode Forward Voltage

(4)

Reverse Recovery Time

Reverse Recovery Charge

ISM

VSD

trr

Qrr

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

µC

Integral reverse pn-diode

in the MOSFET

TJ=25°C,IS=25A,VGS=0V

TJ=25°C,IF=25A

diF/dt=100A/µs

(4)

IRFP254A

250

2.0

0.27

345

155

35.6

4.0

100

-100

100

0.14

3000

400

180

190

100

114

17.45

2300

255

2.3

100

1.5

Notes;

(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

(2) L=2mH, I

AS=25A, VDD=50V, RG=27Ω, Starting TJ =25°C

(3) I

SD ≤ 25A, di/dt ≤ 300A/µs, VDD ≤ BVDSS , Starting TJ =25°C

(4) Pulse Test: Pulse Width = 250

µs, Duty Cycle ≤ 2%

(5) Essentially Independent of Operating Temperature

Rev. B

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