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GP30NC60K датащи(PDF) 4 Page - STMicroelectronics

номер детали GP30NC60K
подробное описание детали  30 A - 600 V - short circuit rugged IGBT
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

GP30NC60K датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGB30NC60K - STGP30NC60K
4/15
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)CES
Collector-emitter breakdown
voltage (VGE= 0)
IC= 1 mA
600
V
VCE(SAT)
Collector-emitter saturation
voltage
VGE= 15 V, IC= 20 A
VGE= 15 V, IC= 20 A,
Tc= 125°C
2.1
1.9
2.7
V
V
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
VCE = 600 V, TC= 125°C
150
1
µA
mA
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250 µA
4.5
6.5
V
IGES
Gate-emitter cut-off
current (VCE = 0)
VGE= ±20 V
±100
nA
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
VCE = 15 V , IC = 20 A
15
S
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25 V, f = 1 MHz, VGE= 0
2170
230
46
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 480 V, IC = 20 A,
VGE = 15 V
(see Figure 17)
96
18
46
nC
nC
nC



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