 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
STP30NF20 датащи(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP30NF20 датащи(HTML) 5 Page - STMicroelectronics |
|
|
5 / 16 page  STP30NF20 - STW30NF20 - STB30NF20 Electrical characteristics 5/16 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=100V, ID=15A, RG=4.7Ω, VGS=10V (see Figure 16) 35 15.7 ns ns td(off) tf Turn-off delay time Fall time VDD=100V, ID=15A, RG=4.7Ω, VGS=10V (see Figure 16) 38 8.8 ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 30 120 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=30A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=30A, di/dt = 100A/µs, VDD=100 V, Tj=25°C 155 0.96 12.4 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=30A, di/dt = 100A/µs, VDD=100 V, Tj=150°C 194 1.42 14.6 ns µC A |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
