Potens semiconductor corp.

Ver.1.00

1

PDF0959

100V P-Channel MOSFETs

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-100

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current

– Continuous (TC=25℃)

-25

A

Drain Current

– Continuous (TC=100℃)

-16

A

IDM

Drain Current

– Pulsed1

-100

A

EAS

Single Pulse Avalanche Energy2

180

mJ

IAS

Single Pulse Avalanche Current2

-60

A

PD

Power Dissipation (TC=25℃)

68

W

Power Dissipation

– Derate above 25℃

0.54

W/℃

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction to ambient

---

62

℃/W

RθJC

Thermal Resistance Junction to Case

---

1.84

℃/W

BVDSS

RDSON

ID

-100V

38m



-25A

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 -100V,-25A, RDS(ON) 38m

Ω@VGS = -10V

 Improved dv/dt capability

 Fast switching

 Green Device Available

General Description

Features

Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)

Thermal Characteristics

Applications

TO220F Pin Configuration

 Networking

 Load Switch

 LED applications

D

G

S

G

D

S