Potens semiconductor corp.

Ver.1.00

2

PDF0956

100V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

100

---

---

V

△

BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃

 , ID=1mA

---

0.09

---

V/℃

IDSS

Drain-Source Leakage Current

VDS=100V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=80V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±

100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=10A

---

90

115

m



VGS=4.5V , ID=8A

---

95

120

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

-5

---

mV/℃

gfs

Forward Transconductance

VDS=10V , ID=2A

---

8.7

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge

3,4

VDS=50V , VGS=10V , ID=2A

---

20

40

nC

Qgs

Gate-Source Charge

3,4

---

3.2

6

Qgd

Gate-Drain Charge

3,4

---

3.6

7

Td(on)

Turn-On Delay Time

3,4

VDD=50V , VGS=10V , RG=3.3

ID=1A

---

18

36

ns

Tr

Rise Time

3,4

---

4

8

Td(off)

Turn-Off Delay Time

3,4

---

40

80

Tf

Fall Time

3,4

---

3

6

Ciss

Input Capacitance

VDS=25V , VGS=0V , F=1MHz

---

1400

2800

pF

Coss

Output Capacitance

---

60

120

Crss

Reverse Transfer Capacitance

---

35

70

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

2

4



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

10

A

ISM

Pulsed Source Current

---

---

20

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

trr

Reverse Recovery Time

3

IS=1A , dI/dt=100A/µs TJ=25℃

---

38

---

ns

Qrr

Reverse Recovery Charge

3

---

27

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=25V,VGS=10V,L=0.1mH,IAS=11A.,RG=25,Starting TJ=25℃.

3.

The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings