VND830MSP-E datasheet(9/20 Pages) STMICROELECTRONICS

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VND830MSP-E

Figure 8. Application Schematic

GND

PROTECTION

NETWORK

AGAINST

REVERSE BATTERY

Solution 1: Resistor in the ground line (RGND only). This

can be used with any type of load.

The following is an indication on how to dimension the

RGND resistor.

1) RGND ≤ 600mV / IS(on)max.

2) RGND ≥ (−VCC) / (-IGND)

where -IGND is the DC reverse ground pin current and can

be found in the absolute maximum rating section of the

device’s datasheet.

Power Dissipation in RGND (when VCC<0: during reverse

battery situations) is:

PD= (-VCC)

2/RGND

This resistor can be shared amongst several different

HSD. Please note that the value of this resistor should be

calculated with formula (1) where IS(on)max becomes the

sum of the maximum on-state currents of the different

devices.

Please note that if the microprocessor ground is not

common with the device ground then the RGND will

produce a shift (IS(on)max * RGND) in the input thresholds

and the status output values.

This shift will vary depending on how many devices are

ON in the case of several high side drivers sharing the

same RGND.

If the calculated power dissipation leads to a large

resistor or several devices have to share the same

resistor then the ST suggests to utilize Solution 2 (see

below).

Solution 2: A diode (DGND) in the ground line.

A resistor (RGND=1kΩ) should be inserted in parallel to

DGND if the device will be driving an inductive load.

This small signal diode can be safely shared amongst

several different HSD. Also in this case, the presence of

the ground network will produce a shift (

j600mV) in the in-

put threshold and the status output values if the micropro-

cessor ground is not common with the device ground.

This shift will not vary if more than one HSD shares the

same diode/resistor network.

VCC

OUTPUT2

Dld

+5V

Rprot

OUTPUT1

STATUS1

INPUT1

+5V

STATUS2

INPUT2

GND

+5V

µC

Rprot

DGND

RGND

VGND

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