LET8180 datasheet(1/4 Pages) STMICROELECTRONICS

номер детали	LET8180

подробное описание детали	RF POWER TRANSISTORS Ldmos Enhanced Technology

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TARGET DATA

January, 28 2003

LET8180

RF POWER TRANSISTORS

Ldmos Enhanced Technology

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION,

PUSH-PULL

• POUT = 220 W with 17 dB TYP. gain @ 860 MHz

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

• ESD PROTECTION

DESCRIPTION

The LET8180 is a common source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1.0

GHz. The LET8180 is designed for high gain and

broadband performance operating in common

source mode at 32 V. Its internal matching makes

it ideal for base station applications requiring high

linearity.

PIN CONNECTION

1

3

5

2

1. Drain

2. Drain

3. Source

4. Gate

5. Gate

4

M252

epoxy sealed

ORDER CODE

LET8180

BRANDING

LET8180

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

-0.5 to +15

V

ID

Drain Current

18

A

PDISS

Power Dissipation (@ Tc =+70 °C)

289

W

Tj

Max. Operating Junction Temperature

200

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

0.45

°C/W

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