BB506CFS datasheet(2/9 Pages) RENESAS

номер детали	BB506CFS

подробное описание детали	Built in Biasing Circuit MOS FET IC UHF RF Amplifier

PDF	9 Pages

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производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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2 / 9 page

BB506C

Rev.1.00

Jun. 27, 2005,

page 2 of 8

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V(BR)DSS

—

ID = 200

µA, VG1S = VG2S = 0

Gate1 to source breakdown

voltage

V(BR)G1SS

—

IG1 = +10

µA, VG2S = VDS = 0

Gate2 to source breakdown

voltage

V(BR)G2SS

—

IG2 = +10

µA, VG1S = VDS = 0

Gate1 to source cutoff

current

IG1SS

—

+100

VG1S = +5 V, VG2S = VDS = 0

Gate2 to source cutoff

current

IG2SS

—

+100

VG2S = +5 V, VG1S = VDS = 0

Gate1 to source cutoff

voltage

VG1S(off)

0.5

0.8

1.1

VDS = 5 V, VG2S = 4 V, ID = 100

µA

Gate2 to source cutoff

voltage

VG2S(off)

0.4

0.7

1.0

VDS = 5 V, VG1S = 5 V, ID = 100

µA

Drain current

ID(op)

VDS = 5 V, VG1 = 5 V, VG2S = 4 V

RG = 100 k

Ω

Forward transfer admittance

|yfs|

VDS = 5 V, VG1 = 5 V, VG2S = 4 V

RG = 100 k

Ω, f = 1 kHz

Input capacitance

Ciss

1.2

1.6

2.0

Output capacitance

Coss

0.7

1.1

1.5

VDS = 5 V, VG1 = 5 V, VG2S = 4 V

RG = 100 k

Ω, f = 1 MHz

Power gain

Noise figure

—

1.4

2.1

VDS = 5 V, VG1 = 5V, VG2S = 4 V

RG = 100 k

Ω, f = 900 MHz

Bias Circuit for Operating Items (ID(op), |yfs|, Ciss, Coss, NF, PG)

Gate 1

Source

Drain

Gate 2

R G

I D

VG2

VG1

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