Potens semiconductor corp.

Ver.1.02

2

PDC0744T

100V N+P Dual Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

40

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.04

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=100V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=80V , VGS=0V , TJ=125

℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=4A

---

140

168

m



VGS=4.5V , ID=3A

---

145

188

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-4.9

---

mV/

℃

gfs

Forward Transconductance

VDS=10V , ID=3A

---

6

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge4 , 5

VDS=80V , VGS=10V , ID=10A

---

14.5

21.8

nC

Qgs

Gate-Source Charge4 , 5

---

4.8

7.2

Qgd

Gate-Drain Charge4 , 5

---

2

3

Td(on)

Turn-On Delay Time4 , 5

VDD=80V , VGS=10V , RG=6



ID=10A

---

5

---

ns

Tr

Rise Time4 , 5

---

25

---

Td(off)

Turn-Off Delay Time4 , 5

---

22

---

Tf

Fall Time4 , 5

---

8

---

Ciss

Input Capacitance

VDS=80V , VGS=0V , F=1MHz

---

1026

1500

pF

Coss

Output Capacitance

---

21.8

33

Crss

Reverse Transfer Capacitance

---

15.2

23

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.7

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

10

A

ISM

Pulsed Source Current

---

---

20

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25

℃

---

---

1

V

trr

Reverse Recovery Time

VR=100V, IS=10A ,

di/dt=

100A/μs , TJ=25℃

---

24.5

---

ns

Qrr

Reverse Recovery Charge

---

65

---

nC

N-CH Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings

Note :

1.

Pw ≦ 1s, Limited only by maximum temperature allowed.

2.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

3.

VDD=25V,VGS=10V,L=0.1mH,IAS=10A.,RG=25

,Starting T

J

=25

℃.

4.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

5.

Essentially independent of operating temperature.