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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L9904 датащи(PDF) 6 Page - STMicroelectronics |
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L9904 датащи(HTML) 6 Page - STMicroelectronics |
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6 / 17 page  L9904 6/17 tKr Rise time VVS = 13.5V; Fig. 1 External loads at K-line: RK = 510Ω pull up to VVS CK = 2.2nF to GND 26 µs tKf Fall time 26 µs tKH Switch high delay time 4 17 µs tKL Switch low delay time 4 17 µs tSH Short circuit detection time VVS = 13.5V; TX = LOW VK > 0.55 · VVS 10 40 µs Charge pump VCP Charge pump voltage VVS = 8V VVS = 13.5V VVS = 20V VVS+ 7V VVS+ 10V VVS+ 10V VVS+ 14V VVS+ 14V VVS +14V ICP Charging current VCP= VVS + 8V VVS = 13.5V -50 -75 µA tCP Charging time 2) VCP= VVS + 8V VVS = 13.5V CCP = 10nF 1.2 4 ms fCP Charge pump frequency VVS = 13.5V 250 500 750 kHz Drivers for external highside power MOS VCB1 VCB2 Bootstrap voltage VVS = 8V; ICBX = 0; VSX = 0 VVS =13.5V; ICBX = 0; VSX = 0 VVS = 20V; ICBX = 0; VSX = 0 7.5 10 10 14 14 14 V V V RGH1L RGH2L ON-resistance of SINK stage VCBX = 8V; VSX = 0 IGHX = 50mA; TJ = 25°C 10 Ω VCBX = 8V; VSX = 0 IGHX = 50mA; TJ = 125°C 20 Ω RGH1H RGH2H ON-resistance of SOURCE stage IGHX = -50mA; TJ = 25°C IGHX = -50mA; TJ = 125°C 10 20 Ω Ω VGH1H VGH2H Gate ON voltage (SOURCE) VVS= VSX = 8V; IGHX = 0; CCBX = 0.1µF VVS +6.5V VVS +14V VVS = VSX = 13.5V; IGHX = 0; CCBX = 0.1µF VVS+ 10V VVS +14V VVS = VSX = 20V; IGHX = 0; CCBX = 0.1µF VVS +10V VVS +14V RGH1 RGH2 Gate discharge resistance EN = LOW 10 100 k Ω RS1 RS2 Sink resistance 10 100 k Ω Symbol Parameter Test Condition Min. Typ. Max. Unit ELECTRICAL CHARACTERISTICS (continued) |
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