SILIICON PLANAR ZENER DIODES

BZX55C

2.4V to 120V

500mW

DO- 35

Glass Axial Package

Best suited for Industrial, Military and Space Applications. The glass passivated diode chip in the

hermetically sealed glass package with double studs provides excellent stability and reliability.

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

SYMBOL

PTA

PS

Tj

Tstg

Rth(j-a)

(1) On infinite heatsink with 4mm lead length.

Forward Voltage @ IF=200mA (BZX55C 2.4V - 27V)

VF

Forward Voltage @ IF=200mA (BZX55C 30V - 120V)

VF

ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)

Device

VZT

rZT

IZT

rZK

IZK

Temp. Coeff

IR @

VR

@ IZT*

@ IZT*

@ IZK

of

Tamb

Zener Voltage

25°C

150°C

min

max

max

max

typ

max

max

(V)

(V)

(

Ω

Ω) (mA)

(

Ω

Ω)

(mA)

(%/°C)

(

µµA)

(

µµA)

(V)

BZX55C 2V4

2.28

2.56

85

5.0

600

1.0

-0.07

50

100

1.0

BZX55C 2V7

2.50

2.90

85

5.0

600

1.0

-0.07

10

50

1.0

BZX55C 3V0

2.80

3.20

85

5.0

600

1.0

-0.07

4.0

40

1.0

BZX55C 3V3

3.10

3.50

85

5.0

600

1.0

-0.06

2.0

40

1.0

BZX55C 3V6

3.40

3.80

85

5.0

600

1.0

-0.06

2.0

40

1.0

BZX55C 3V9

3.70

4.10

85

5.0

600

1.0

-0.05

2.0

40

1.0

BZX55C 4V3

4.00

4.60

75

5.0

600

1.0

-0.03

1.0

20

1.0

BZX55C 4V7

4.40

5.00

60

5.0

600

1.0

-0.01

0.5

10

1.0

BZX55C 5V1

4.80

5.40

35

5.0

550

1.0

+0.01

0.1

2.0

1.0

BZX55C 5V6

5.20

6.00

25

5.0

450

1.0

+0.03

0.1

2.0

1.0

BZX55C 6V2

5.80

6.60

10

5.0

200

1.0

+0.04

0.1

2.0

2.0

BZX55C 6V8

6.40

7.20

8

5.0

150

1.0

+0.05

0.1

2.0

3.0

BZX55C 7V5

7.00

7.90

7

5.0

50

1.0

+0.05

0.1

2.0

5.0

BZX55C 8V2

7.70

8.70

7

5.0

50

1.0

+0.06

0.1

2.0

6.2

BZX55C 9V1

8.50

9.60

10

5.0

50

1.0

+0.06

0.1

2.0

6.8

BZX55C 10

9.40

10.60

15

5.0

70

1.0

+0.07

0.1

2.0

7.5

BZX55C 11

10.40

11.60

20

5.0

70

1.0

+0.07

0.1

2.0

8.2

BZX55C 12

11.40

12.70

20

5.0

90

1.0

+0.07

0.1

2.0

9.1

BZX55C 13

12.40

14.10

26

5.0

110

1.0

+0.07

0.1

2.0

10

BZX55C2V4_120V Rev_3 050604E

*Pulse Condition : 20ms < tp <50ms . Duty Cycle <2%

Thermal Resistance Junction to Ambient (1)

max

mW

W

°C

°C/mW

VALUE

500

5.0

175

0.3

- 65 to +175

UNIT

DESCRIPTION

1.2

1.5

V

V

Surge Power Dissipation Pulse Width=10 ms

Power Dissipation (1)

Junction Temperature

Storage Temperature

°C

IZM

Tamb

50°C

(mA)

155

135

125

115

105

95

90

85

80

70

64

58

53

47

43

40

36

32

29

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company