Potens semiconductor corp.

Ver.1.00

2

PDB2116M

20V N+P Dual Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

20

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.02

---

V/℃

IDSS

Drain-Source Leakage Current

VDS=16V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=16V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±10V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V , ID=3A

---

30

40

m



VGS=2.5V , ID=2A

---

42

55

m



VGS=1.8V , ID=1.5A

55

70

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

0.3

0.6

1

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-2

---

mV/℃

gfs

Forward Transconductance

VDS=10V , ID=2A

---

4.4

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=10V , VGS=4.5V , ID=3A

---

5.8

10

nC

Qgs

Gate-Source Charge2 , 3

---

0.6

1.5

Qgd

Gate-Drain Charge2 , 3

---

1.5

3

Td(on)

Turn-On Delay Time2 , 3

VDD=10V , VGS=4.5V , RG=25



ID=1A

---

2.9

6

ns

Tr

Rise Time2 , 3

---

8.4

16

Td(off)

Turn-Off Delay Time2 , 3

---

19.2

38

Tf

Fall Time2 , 3

---

5.6

12

Ciss

Input Capacitance

VDS=15V , VGS=0V , F=1MHz

---

315

600

pF

Coss

Output Capacitance

---

50

80

Crss

Reverse Transfer Capacitance

---

40

60

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

3.8

A

ISM

Pulsed Source Current

---

---

7.6

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

N-CH Electrical Characteristics (T

J=25 ℃, unless otherwise)

noted)

Drain-Source Diode Characteristics and Maximum Ratings

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.